PART |
Description |
Maker |
MGP14N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MGY25N120D-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
F2202S |
TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 1.6A I(D) FET, Enhancement, ID 1.6 A PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER
|
Polyfet RF Devices List of Unclassifed Manufacturers
|
MTY16N80E |
N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
IRF530 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE
|
Transys Electronics
|
ST744 |
SILICON GATE ENHANCEMENT MODE RF POWER VDMOSTRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
L2711 |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
LP701 |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
LP721 |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
LP722 |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|